| English term or phrase: scaling of emissions currents with array size | | In order to scale this device concept to micromachined dimensions, a two-step photolithographical process has been utilized and devices with varying gate diameters and gate-to-tip recesses have been fabricated in monocrystalline silicon. The fabrication process has been described in [2] and in [4]; emission characteristics in terms of geometry-dependent β factors, scaling of emissions currents with array size, temperature dependency, pressure dependency, current fluctuations, and image formation have been presented for gate-induced operation. |
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