GLOSSARY ENTRY (DERIVED FROM QUESTION BELOW) | ||||||
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10:24 Mar 15, 2018 |
English to French translations [PRO] Tech/Engineering - Electronics / Elect Eng / MOSFET, source region , collector, current, substrate | |||||||
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| Selected response from: Tony M France Local time: 02:00 | ||||||
Grading comment
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Summary of reference entries provided | |||
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Here's a patent that describes what it is |
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Discussion entries: 3 | |
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mosfet-gated transistor transistor à effet de champ à structure métal-oxyde-semiconducteur Explanation: une suggestion... |
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18 mins confidence: peer agreement (net): -1
1 hr confidence:
1 hr confidence: peer agreement (net): -1
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52 mins |
Reference: Here's a patent that describes what it is Reference information: (though it is probably MT) EP0884818A1 - Procédé de commande d'au moins un transistor du ... https://www.google.com/patents/EP0884818A1 La figure 1 illustre un schéma équivalent d'un transistor IGBT, qui se caractérise par un transistor MOS en entrée (transistor T1) et un transistor bipolaire PNP en sortie (transistor T2). En commandant la grille du transistor MOS T1 on initie l'état passant ou non du transistor PNP T2 en sortie. Lorsque l'on polarise la grille ... -------------------------------------------------- Note added at 57 minutes (2018-03-15 11:21:55 GMT) -------------------------------------------------- Well, it is only incidental to the patent, and in the form of an IGBT, which is a related but not identical device. However it does at least prove there are native FR engineers working with these devices, so we stand some hope of finding a "proper" translation — though as so much in this field, I suspect the EN terminology is widespread. |
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