MOSFET-gated transistor

French translation: transistor à jonctions bipolaire à grille MOSFET (transistor MGT)

GLOSSARY ENTRY (DERIVED FROM QUESTION BELOW)
English term or phrase:MOSFET-gated transistor
French translation:transistor à jonctions bipolaire à grille MOSFET (transistor MGT)
Entered by: Tony M

10:24 Mar 15, 2018
English to French translations [PRO]
Tech/Engineering - Electronics / Elect Eng / MOSFET, source region , collector, current, substrate
English term or phrase: MOSFET-gated transistor
high power wide band-gap MOSFET-gated bipolar junction transistors ("MGT") are provided. These MGTs include a first wide band-gap SiC.
bipolar junction transistor ("BJT") having a first collector, a first emitter and a first base, a wide band-gap SiC MOSFET having a source région that is configured to provide a current to the base of the first wide band-gap BJT so that the first SiC BJT and the SiC MOSFET are connected in Darlington configuration, and a second wide band-gap BJT having a second collector, a second emitter and a second base. The second collector is electrically connected to the first collector, the second emitter is electrically connected to the first emitter,
and the second base is electrically connected to the first base. The second base is thinner than the first base.

Devices embodying a combination of bipolar current conduction with MOS-controlled current flow are also known. One example of such a device is the Insulated Gate Bipolar Transistor ("IGBT"), which is a device that combines the high impédance gâte of the power MOSFET with the small on-state conduction losses of the power BJT. Another device that combines MOSFET and BJT is the MOSFET Gated Transistor ("MGT"). An MGT may be implemented, for example, as a Darlington pair of discrete high voltage n-channel MOSFET at the input and a discrete BJT at the output. The MOSFET supplies the base current of the BJT while presenting minimal load to external drive circuits. The MGT may combine the high température, high current density switching characteristics of the BJT with the minimal drive requirement of the MOSFET.
AH WORD
Local time: 02:00
transistor à jonctions bipolaire à grille MOSFET (transistor MGT)
Explanation:
This may not be the correct term, as it returns only 2 Google hits (actually from the same document!) — but then it is a fairly recent concept, and this may at least give you material for further research

Patent EP2454756A2 - Transistors à jonctions bipolaires à grille ...

https://www.google.com/patents/EP2454756A2?cl=fr

La présente invention concerne des transistors à jonctions bipolaires à grille MOSFET à large bande interdite de forte puissance (transistors MGT), comprenant : un premier transistor à jonctions bipolaires (transistor BJT) à large bande interdite comportant un premier collecteur, un premier émetteur, et une première base ...

Transistors à jonctions bipolaires à grille mosfet à ... - Google Patents

https://patents.google.com/patent/EP2454756A2/fr

La présente invention concerne des transistors à jonctions bipolaires à grille MOSFET à large bande interdite de forte puissance (transistors MGT), comprenant : un premier transistor à jonctions bipolaires (transistor BJT) à large bande interdite comportant un premier collecteur, un premier émetteur, et une première base ...

Because of the highly specialized nature of this technology, please note how very important it is to carefully translate the whole of the term!
Selected response from:

Tony M
France
Local time: 02:00
Grading comment
4 KudoZ points were awarded for this answer



Summary of answers provided
5 -1transistor à effet de champ à structure (grille) métal-oxyde-semiconducteur
Marcombes (X)
3transistor à effet de champ à structure métal-oxyde-semiconducteur
florence metzger
4 -1Transistor MOSFET
Renvi Ulrich
2transistor à jonctions bipolaire à grille MOSFET (transistor MGT)
Tony M
Summary of reference entries provided
Here's a patent that describes what it is
Tony M

Discussion entries: 3





  

Answers


9 mins   confidence: Answerer confidence 3/5Answerer confidence 3/5
mosfet-gated transistor
transistor à effet de champ à structure métal-oxyde-semiconducteur


Explanation:
une suggestion...

florence metzger
Local time: 02:00
Native speaker of: Native in FrenchFrench
PRO pts in category: 579

Peer comments on this answer (and responses from the answerer)
disagree  Tony M: This is not the correct translation of the whole source term, which is very specific. / Yes — but you have only translated 'MOSFET', which is the easy part ;-) / You have left out that little "-gated", which is the whole crux of the matter here!
31 mins
  -> ce qui est demande c'est MOSFET-gated transistor ou alors je ne sais pas lire....

agree  GILLES MEUNIER
5 days
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18 mins   confidence: Answerer confidence 4/5Answerer confidence 4/5 peer agreement (net): -1
mosfet-gated transistor
Transistor MOSFET


Explanation:
Validé par Toshiba.

Qu'est-ce qu'un MOSFET ?
L'acronyme MOSFET correspond à Metal-Oxyde Semiconductor Field Effect Transistor, soit « transistor à effet de champ à grille métal-oxyde ». Il s'agit d'un transistor à effet de champ doté d'une structure MOS. En général, le MOSFET est un dispositif à trois bornes : source (S), grille (G) et drain (D). La conduction électrique entre le drain (D) et la source (S) est contrôlée par une tension appliquée au niveau de la grille (ou porte) (G). Par leur vitesse relativement élevée et leur fonctionnement à faible perte, les MOSFET se comparent aisément à des transistors bipolaires.

https://toshiba.semicon-storage.com/fr/design-support/faq/mo...

Renvi Ulrich
Cameroon
Local time: 01:00
Specializes in field
Native speaker of: Native in FrenchFrench
PRO pts in category: 15
Notes to answerer
Asker: Merci pour votre récativité Monsieur! alors vous pensez que MOSFET-gated Transistor peut être traduit par Transistor à grille MOSFET ? car le terme d'origine ce n'est pas MOSFET Transistor mais il y a le terme -gated qui m'inquiète


Peer comments on this answer (and responses from the answerer)
disagree  Tony M: This is not the correct translation of the whole source term, which is very specific. / You are missing the point, as you only translate the easy part of the term; this is a highly specialized subject area!
22 mins
  -> Toshiba might be wrong then! That's exactly the choice they made, and it makes very good sense for me (see my explanation). https://toshiba.semicon-storage.com/fr/design-support/faq/mo...
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1 hr   confidence: Answerer confidence 2/5Answerer confidence 2/5
transistor à jonctions bipolaire à grille MOSFET (transistor MGT)


Explanation:
This may not be the correct term, as it returns only 2 Google hits (actually from the same document!) — but then it is a fairly recent concept, and this may at least give you material for further research

Patent EP2454756A2 - Transistors à jonctions bipolaires à grille ...

https://www.google.com/patents/EP2454756A2?cl=fr

La présente invention concerne des transistors à jonctions bipolaires à grille MOSFET à large bande interdite de forte puissance (transistors MGT), comprenant : un premier transistor à jonctions bipolaires (transistor BJT) à large bande interdite comportant un premier collecteur, un premier émetteur, et une première base ...

Transistors à jonctions bipolaires à grille mosfet à ... - Google Patents

https://patents.google.com/patent/EP2454756A2/fr

La présente invention concerne des transistors à jonctions bipolaires à grille MOSFET à large bande interdite de forte puissance (transistors MGT), comprenant : un premier transistor à jonctions bipolaires (transistor BJT) à large bande interdite comportant un premier collecteur, un premier émetteur, et une première base ...

Because of the highly specialized nature of this technology, please note how very important it is to carefully translate the whole of the term!

Tony M
France
Local time: 02:00
Specializes in field
Native speaker of: Native in EnglishEnglish
PRO pts in category: 1453
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1 hr   confidence: Answerer confidence 5/5 peer agreement (net): -1
mosfet-gated transistor
transistor à effet de champ à structure (grille) métal-oxyde-semiconducteur


Explanation:
Un transistor à effet de champ à grille isolée plus couramment nommé MOSFET (acronyme anglais de Metal Oxide Semiconductor Field Effect Transistor - qui se traduit par transistor à effet de champ à structure métal-oxyde-semiconducteur), est un type de transistor à effet de champ.

Marcombes (X)
France
Local time: 02:00
Specializes in field
Native speaker of: Native in FrenchFrench
PRO pts in category: 89

Peer comments on this answer (and responses from the answerer)
disagree  Tony M: This is not the correct translation of the whole source term, which is very specific. / But not of the right term!
1 min
  -> les deux traductions que j'ai indiquées sont officielles
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Reference comments


52 mins
Reference: Here's a patent that describes what it is

Reference information:
(though it is probably MT)

EP0884818A1 - Procédé de commande d'au moins un transistor du ...

https://www.google.com/patents/EP0884818A1

La figure 1 illustre un schéma équivalent d'un transistor IGBT, qui se caractérise par un transistor MOS en entrée (transistor T1) et un transistor bipolaire PNP en sortie (transistor T2). En commandant la grille du transistor MOS T1 on initie l'état passant ou non du transistor PNP T2 en sortie. Lorsque l'on polarise la grille ...

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Note added at 57 minutes (2018-03-15 11:21:55 GMT)
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Well, it is only incidental to the patent, and in the form of an IGBT, which is a related but not identical device.
However it does at least prove there are native FR engineers working with these devices, so we stand some hope of finding a "proper" translation — though as so much in this field, I suspect the EN terminology is widespread.

Tony M
France
Specializes in field
Native speaker of: Native in EnglishEnglish
PRO pts in category: 1453
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