Asked | Open questions | Answered
Points Date Pair Term / Answer given Level Status Gloss
- Nov 13 '10 jpn>eng 所定状態に specified positional relationship pro closed no
- Mar 16 '10 jpn>eng 出願に走る rush to premature application pro closed no
4 Oct 1 '09 jpn>eng 対応付けておきます associate pro closed no
4 Oct 1 '09 jpn>eng この総和に等しい数だけ識別子を生成する generate as many identifiers as this sum pro closed no
4 Sep 12 '09 jpn>eng 左回転螺旋ピッチのコレステリック液晶 cholesteric crystals with left-handed helical pitch pro closed no
4 Sep 12 '09 jpn>eng コレステリック液晶の透過光の帯域幅 (optical) transmission bandwidth of cholesteric crystals pro closed no
4 Sep 12 '09 jpn>eng 透過光の中心波長が異なる複数のコレステリック液晶 multiple cholesteric crystals with different peak transmission wavelengths pro closed no
4 Sep 8 '09 jpn>eng テコの作用 leveraging effect pro closed no
4 Jan 18 '09 jpn>eng すればよい Use the imperative pro closed no
4 May 28 '08 jpn>eng DRAMの半導体装置は、クロックに同期して動作するタイプが主流である。 Most of DRAM-based semiconductor circuits are (currently) synchronized with the clock (signal). pro closed no
4 Jan 4 '08 jpn>eng 不純物濃度分布に非対称性を生じさせることができる the districution of impurity concentration can be made asymmetrical pro closed no
- Dec 27 '07 jpn>eng AAを平面視横断するようにゲート電極 gate electrode that is placed across AA pro closed no
4 Dec 27 '07 jpn>eng 左右の対とされたソース電極AA a pair of source electrodes AA on left and right side pro closed no
- Dec 27 '07 jpn>eng 隣接する活性領域Kを絶縁分離している insulator that separates the adjacent active region K pro closed no
4 Dec 27 '07 jpn>eng 成膜時の雰囲気を構成するジクロロシラン dichlorosilane, which constitutes the film growth atmosphere pro closed no
4 Dec 27 '07 jpn>eng リフレッシュ特性において信号遅延の問題が生じてきている signal delay is becoming an issue in the refresh characteristics pro closed no
4 Dec 22 '07 jpn>eng シリコン層を積み上げ形成する工程 epitaxial growth of the silicon layer pro closed no
4 Dec 20 '07 jpn>eng 通電使用しないダミーゲート電極 dummy gate electrode where no voltage is applied pro closed no
4 Dec 20 '07 jpn>eng ゲート電極に隣接する半導体基板上にシリコン層を成長させた状態 silicon layer grown next to the gate electrode on a semiconductor substrate pro closed no
4 Dec 20 '07 jpn>eng 不純物をドーピングしてソース部とドレイン部を形成した状態 formation of source and drain regions by doping impurity pro closed no
4 Dec 19 '07 jpn>eng 層間絶縁層とコンタクト用の電極を積層形成した状態 layered formation of a dielectric layer between layers and an electrode layer for an external contac pro closed no
4 Dec 19 '07 jpn>eng 選択エピタキシャル法によりシリコン層を成長させた状態 silicon layer grown by selective epitaxy pro closed no
4 Dec 7 '07 jpn>eng 径大な頭部を有する被収容物 content with a large-diameter head pro closed no
4 Dec 4 '07 jpn>eng 開口A閉寒する方向に付勢される部材 material to help block the opening A pro closed no
4 Dec 4 '07 jpn>eng 仕切られる空間相互を連通する connects between partitioned spaces pro closed no
4 Nov 24 '07 jpn>eng 空隙長dがΔdだけ微小変化した時の電圧変化ΔVは The change in voltage, deltaV, is proportional to the change in the distance of the air gap, deltad pro closed no
- Jul 3 '07 jpn>eng 一主面に互いに隔離して apart from each other on a main surface pro closed ok
- Jul 3 '07 jpn>eng 領域の一方 one of the regions pro closed no
4 Jul 3 '07 jpn>eng 一導電型 unipolar pro closed no
4 Jun 14 '07 jpn>eng 上下を合わせて whether the display is oriented up or down pro closed no
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