Jan 23, 2006 12:11
18 yrs ago
Japanese term
United States
Each word chosen with care
Native in: English 
, Japanese
Works in: Japanese to English, English to Japanese
溝形成方法
Japanese to English
Tech/Engineering
Electronics / Elect Eng
digital TV
groove formulation method?
thank you
thank you
Proposed translations
(English)
| 3 | groove forming method |
Ewa Szymanowska
|
| 2 | gap formation |
V N Ganesh
|
| 1 | trench forming/making/etching |
cinefil
|
Proposed translations
18 mins
Ewa Szymanowska
Poland
Poland
Specializes in field
Poland
Technical translator
Native in: Polish 
Works in: English to Polish, Polish to English, Japanese to Polish
Related KudoZ points
:
4
Japanese term (edited):
�a�`�����@
groove forming method
Declined
Maybe like this.
1 hr
Japanese term (edited):
�a�`�����@
gap formation
Declined
The TFT-array and color-filter substrates are made into an LCD panel by assembling the two substrates together with a sealant, while the cell gap is ...
www.avdeals.com/classroom/fabricating_tft_lcd.htm - 44k
www.avdeals.com/classroom/fabricating_tft_lcd.htm - 44k
17 hrs
Japanese term (edited):
�a�`�����@
trench forming/making/etching
Declined
just a guess
For Active Matrix Liquid Crystal Displays. 1 Introduction. Polysilicon thin film transistors are attractive as active ... Topography Simulation of Trench Etch Using Monte Carlo. Plasma Etch Model with Polymer Re-deposition ...
https://src.silvaco.com/ResourceCenter/ en/SimulationStandard/2003/nov/nov2003_lowres.pdf
耐圧55VのOptiMOS-Tシリーズは、トレンチ構造により単位面積あたりのチャネル密度を
大幅に高めたパワーMOSFETです。DPAKパッケージで5.5mΩ、D2PAKパッケージで2.7mΩのオン
抵抗を実現しています。パワースイッチとして多くのアプリケーションに最適です。
www.infineon.jp/designlink/issue3_2004/optimos-t.php -
For Active Matrix Liquid Crystal Displays. 1 Introduction. Polysilicon thin film transistors are attractive as active ... Topography Simulation of Trench Etch Using Monte Carlo. Plasma Etch Model with Polymer Re-deposition ...
https://src.silvaco.com/ResourceCenter/ en/SimulationStandard/2003/nov/nov2003_lowres.pdf
耐圧55VのOptiMOS-Tシリーズは、トレンチ構造により単位面積あたりのチャネル密度を
大幅に高めたパワーMOSFETです。DPAKパッケージで5.5mΩ、D2PAKパッケージで2.7mΩのオン
抵抗を実現しています。パワースイッチとして多くのアプリケーションに最適です。
www.infineon.jp/designlink/issue3_2004/optimos-t.php -
Something went wrong...