The mirror responsible for collecting the light is directly exposed to the plasma and is therefore vulnerable to damage from the high-energy ions[13][14] and other debris.[15] This damage associated with the high-energy process of generating EUV radiation has precluded the successful implementation of practical EUV light sources for lithography.
En:
Contact printing is liable to damage both the mask and the wafer, and this was the primary reason it was abandoned for high volume production. Both contact and proximity lithography require the light intensity to be uniform across an entire wafer, and the mask to align precisely to features already on the wafer. As modern processes use increasingly large wafers, these conditions become increasingly difficult.
Het proces is daar waar de EUV-straling wordt gegenereerd en degene die het uitvoert dient op de invloed van de afstand tot het proces te letten, omdat dat problemen oplevert.