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Translation - English Abstract
Problem: To provide a vertical MOSFET which can markedly reduce on-resistance and is easy to manufacture.
Means for Solving Problem: A vertical MOSFET in which a p-well region 14 is formed in the front surface layer of an n-drift region 12 which is on top of an n -drain layer 11, an n-source region 15 is formed within that p-well region 14, a gate electrode 17 is provided via a gate insulating film 16 on the front surface of the p-well region 14, which is sandwiched between the n-source region 15 and n-drift region 12, and a source electrode 18 which contacts the front surfaces of both the n-source region 15 and p-well region 14 is provided; wherein the impurity concentration distribution of the n-drift region 12 is a linear distribution which gradually increases in the direction of depth, and a trench 22 is dug from the front surface of the p-well region 14, and the inside of the trench 22 is filled with polycrystalline silicon 21 which is shorted to the source electrode via a thick insulating film 20.
WHAT IS CLAIMED IS:
1. A vertical MOSFET including a first conductive drift region of low concentration formed on top of a first conductive substrate of high concentration, a second conductive well region formed selectively in its front surface layer, a first conductive source region formed within said second conductive well region, a gate electrode provided via an insulating film on the front surface of the second conductive well region which is sandwiched between the first conductive drift region and first conductive source region, a source electrode which contacts the front surfaces of both the first conductive source region and second conductive well region, and a drain electrode provided on the rear surface of the first conductive substrate; comprising a trench which is dug from the front surface of the second conductive well region and reaches close to the first conductive substrate, and a conductor provided along the inner walls of said trench via a thick insulating film which withstands the breakdown voltage of the element; wherein said conductor is shorted to the source electrode.
Bachelor's degree - Massachusetts Institute of Technology (MIT)
Years of experience: 32. Registered at ProZ.com: Feb 2008. Became a member: Mar 2008.
Microsoft Excel, Microsoft Word, Powerpoint, SDL TRADOS
CV will be submitted upon request
Lauren has been a professional translator of Japanese documents since 1988. She spent the first 12 years as a full-time freelance translator, and the next 8 years part-time while she worked as a project manager in the software industry. She returned to full-time freelance translation work in 2008.
Lauren has extensive experience translating patents and patent-related documents, scientific journal articles and technical specifications.
After living in Japan for 1.5 years, Lauren continued her study of Japanese at the Harvard Extension School. In 1988 she was the recipient of a grant from the National Science Foundation to participate in a full-time 8-week course taught at the Massachusetts Institute of Technology titled "Technical Japanese for Scientists and Engineers." The class focused primarily on reading and translation of technical and scientific documents.
Lauren holds a bachelor's degree in Materials Science and Engineering from the Massachusetts Institute of Technology.